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參數(shù)資料
| 型號： | μPD23C64000AL |
| 廠商： | NEC Corp. |
| 英文描述： | 64M-Bit Mask-Programmble ROM(64M位掩膜可編程ROM) |
| 中文描述： | 6400位掩模可編程光盤（6400位掩膜可編程光盤） |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 111K |
| 代理商： | ΜPD23C64000AL |
8
μ
PD23C64000AL
Preliminary Data Sheet
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
–0.3 to +4.6
V
Input voltage
V
I
–0.3 to V
CC
+0.3
V
Output voltage
V
O
–0.3 to V
CC
+0.3
V
Operating ambient temperature
T
A
–10 to +70
°C
Storage temperature
T
stg
–65 to +150
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Capacitance (T
A
= 25 °C)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I
10
pF
Output capacitance
C
O
f = 1 MHz
12
pF
DC Characteristics (T
A
= –10 to +70 °C, V
CC
= 2.7 to 3.6 V)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
High level input voltage
V
IH
2.0
V
CC
+ 0.3
V
Low level input voltage
V
IL
V
CC
= 3.0 V
±
0.3 V
–0.3
+0.5
V
V
CC
= 3.3 V
±
0.3 V
–0.3
+0.8
High level output voltage
V
OH
I
OH
= –100
μ
A
2.4
V
Low level output voltage
V
OL
I
OL
= 2.1 mA
0.4
V
Input leakage current
I
LI
V
I
= 0 V to V
CC
–10
+10
μ
A
Output leakage current
I
LO
V
O
= 0 V to V
CC
, Chip deselected
–10
+10
μ
A
Power supply current
I
CC1
/CE
= V
IL
(Active mode),
V
CC
= 3.0 V
±
0.3 V
40
mA
I
O
= 0 mA
V
CC
= 3.3 V
±
0.3 V
45
Standby current
I
CC3
/CE
= V
CC
– 0
.
2 V (Standby mode)
30
μ
A
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