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參數(shù)資料
| 型號(hào)： | 112RKI80S90 |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS Stud Version |
| 中文描述： | 相位控制晶閘管螺柱版本 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 112RKI80S90 |
111RKI Series
23
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
111RKI
Units Conditions
20
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
+V
GM
Maximum peak gate power
12
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
Maximum average gate power
3.0
Max. peak positive gate current
3.0
A
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
to trigger
mA
T
J
= 140°C
V
GT
DC gate voltage required
T
J
= - 40°C
to trigger
V
T
J
= 25°C
T
J
= 140°C
I
GD
DC gate current not to trigger
6.0
mA
Parameter
111RKI
Units Conditions
20
10
Triggering
T
J
= T
J
max
TYP.
MAX.
180
-
80
100
40
-
2.5
-
1.6
2
1
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
≤
5ms
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 140
Max. storage temperature range
-40 to 150
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
15.5
Non lubricated threads
(137)
14
Lubricated threads
(120)
wt
Approximate weight
130
g
Parameter
111RKI
Units
Conditions
0.27
DC operation
0.1
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in)
Case style
TO - 209AC (TO-94)
See Outline Table
V
GD
DC gate voltage not to trigger
0.25
V
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