參數(shù)資料
型號(hào)： 1N4370A
廠商： MOTOROLA INC
元件分類(lèi)： 參考電壓二極管
英文描述： 500 mW DO-35 Glass Zener Voltage Regulator Diodes
中文描述： 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
文件頁(yè)數(shù)： 22/42頁(yè)
文件大?。?/td> 424K
代理商： 1N4370A
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-118
500 mW DO-35 Glass Data Sheet
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LAPD + TA.
θ
LA s the ead-to-ambient thermal resistance (
°
C/W) and PD s
the power dissipation. The value for
θ
LA will vary and depends
on the device mounting method.
θ
LA is generally 30 to 40
°
C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL +
TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
TJL =
θ
JLPD.
θ
JL may be determined from Figure 3 for dc power condi-
tions. For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(
TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V =
θ
VZ
TJ.
θ
VZ, the zener voltage temperature coefficient, is found from
Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.
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參數(shù)描述
1N4370A BK 功能描述:DIODE ZENER 2.4V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:2.4V 容差:- 功率 - 最大值:500mW 工作溫度:- 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500
1N4370A TR 功能描述:DIODE ZENER 2.4V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:2.4V 容差:- 功率 - 最大值:500mW 工作溫度:- 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:10,000
1N4370A/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
1N4370A_Q 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N4370A_T50A 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
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