參數(shù)資料
型號： 2N7002E-T1-GE3
廠商： VISHAY SILICONIX
元件分類： 小信號晶體管
英文描述： 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 174K
代理商： 2N7002E-T1-GE3
www.vishay.com
4
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
Vishay Siliconix
2N7002E
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70860.
Capacitance
Source-Drain Diode Forward Voltage
VDS - Drain-to-Source Voltage (V)
0
8
16
24
32
40
0
5
10
15
20
25
C
rss
C
oss
C
iss
C
-
Capacitance
(pF)
VSD - Source-to-Drain Voltage (V)
0.1
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J = 85 °C
25 °C
- 55 °C
I S
-
So
u
rce
C
u
rrent
(A)
Gate Charge
Qg - Total Gate Charge (nC)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.1
0.2
0.3
0.4
0.5
V
DS = 30 V
I
D = 0.25 A
V
GS
-
Gate-to-So
u
rce
V
oltage
(
V
)
相關(guān)PDF資料
PDF描述
2N7002FT/R 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002G-AL6-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002G-AL3-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KTB 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KW 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002ET3G 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002F 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
2N7002F,215 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002F215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23
2N7002FN3 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
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