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參數(shù)資料
| 型號： | 2SA0720 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信號裝置-小信號晶體管-一般使用低頻Amplifires |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 2SA0720 |
Transistors
1
Publication date: January 2003
SJC00002CED
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■ Features
Complementary pair with 2SC1317 and 2SC1318
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA0719
VCBO
30
V
(Emitter open)
2SA0720
60
Collector-emitter voltage 2SA0719
VCEO
25
V
(Base open)
2SA0720
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
500
mA
Peak collector current
ICP
1A
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA0719
VCBO
IC
= 10 A, I
E
= 0
30
V
(Emitter open)
2SA0720
60
Collector-emitter voltage
2SA0719
VCEO
IC = 10 mA, IB = 0
25
V
(Base open)
2SA0720
50
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE
= 10 V, I
C
= 150 mA
85
340
hFE2
VCE = 10 V, IC = 500 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.35 0.60
V
Base-emitter saturation voltage
VBE(sat)
IC
= 300 mA, I
B
= 30 mA
1.1
1.5
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA720 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA0720A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA720A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA0794 | Power Device - Power Transistors - Others |
| 2SA794 | Power Device - Power Transistors - Others |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0720(2SA720) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA07200RA | 功能描述:TRANS PNP 50VCEO 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0720A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For low-frequency driver amplification Complementary |
| 2SA0720A(2SA720A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0720A (2SA720A) - PNP Transistor |
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