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參數(shù)資料
| 型號(hào)： | 2SB1156 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | FILTER PLATE |
| 中文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, TOP-3F-A1, SC-92, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2SB1156 |
1
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Ratings
–130
–80
–7
–30
–20
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
V
CE
= –2V, I
C
= –10A
I
C
= –8A, I
B
= – 0.4A
I
C
= –20A, I
B
= –2A
I
C
= –8A, I
B
= – 0.4A
I
C
= –20A, I
B
= –2A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –3A, I
B1
= – 0.8A, I
B2
= 0.8A,
V
CC
= –50V
min
–80
45
90
30
typ
25
0.5
1.2
0.2
max
–10
–50
260
– 0.5
–1.5
–1.5
–2.5
Unit
μ
A
μ
A
V
V
V
V
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Note: Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the rank classification.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB11560P | 功能描述:TRANS PNP 80VCEO 20A TOP-3F RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SB1156P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1156Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1156R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1157 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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