參數(shù)資料
型號(hào): 2SK2110
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 5/7頁
文件大小: 225K
代理商: 2SK2110
Data Sheet D11230EJ3V0DS
3
2SK2110
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
TA - Ambient Temperature - C
dT
-
Derating
Factor
-
%
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
0.2
0.1
2
5
20
50
100
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.5
1
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
ms
1 ms
PW
=
100
ms
DC
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
10 V
VGS = 2.0 V
TRANSFER CHARACTERISTICS
1
0.1
0.01
0.001
0.5
1
1.5
2
2.5
3
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.0001
VDS = 10 V
TA = 75C
25C
–25C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
0.001
0.01
0.1
1
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
0.01
VDS = 10 V
25C
75C
TA = –25C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.5
1
0.01
0.1
1
10
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
Ω
0
VGS = 4 V
0.5
TA = 75C
25C
–25C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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