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參數(shù)資料
| 型號(hào)： | 2SK2529-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2SK2529-E |
2SK2529
Rev.8.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
10
0
50
100
150
200
500
200
100
20
50
10
2
5
1
0.5
0.1
0.3
1
3
10
30
100
Operation in
this area is
limited by RDS(on)
Ta = 25
°C
10
s
100
s
1 ms
PW
=
10
m
s (1shot)
DC
Operation
(Tc
=
25
°C)
100
80
60
40
20
0
Pulse Test
3.5 V
4 V
5 V
10 V
3 V
VGS = 2.5 V
2
468
10
6 V
100
80
60
40
20
0
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
12
34
5
1.0
0.8
0.6
0.4
0.2
0
Pulse Test
24
6
810
ID = 50 A
20 A
10 A
1
10
100
1000
3
30
300
0.5
0.2
0.1
0.02
0.05
0.01
0.002
0.005
0.001
0.0005
VGS = 4 V
10 V
Pulse Test
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