參數(shù)資料
型號(hào): 2SK2723
元件分類: JFETs
英文描述: 25 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 189K
代理商: 2SK2723
1994
DATA SHEET
The information in this document is subject to change without notice.
MOS Field Effect Power Transistors
2SK2723
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching spplications.
FEATURES
Low On-Resistance
RDS (on) 1 = 40m
Max. (VGS = 10 V, ID = 13 A)
RDS (on) 2 = 60m
Max. (VGS = 4 V, ID = 13 A)
Low Ciss
Ciss = 830 pF Typ.
Built-in G-S Protection Diode
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±25
A
Drain Current (pulse)*
ID (pulse)
±100
A
Total Power Dissipation (TA = 25
°C)
PT
2.0
W
Total Power Dissipation (Tc = 25
°C)
PT
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
*PW
≤ 10
s, Duty Cycle ≤ 1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
10.0
± 0.3
PACKAGE DIMENSIONS
(in millimeter)
MP-45F (ISOLATED TO-220)
4.5
± 0.2
2.7
± 0.2
2.5
± 0.1
1.3
± 0.2
4
±
0.2
13.5MIN.
12.0
±
0.2
15.0
±
0.3
3
±
0.1
0.7
± 0.1
1.5
± 0.2
2.54
1.Gate
2.Drain
3.Source
2.54
12
3
0.65
± 0.1
3.2
± 0.2
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
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