- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48161 > 2SK3132 50 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3132 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-21F1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 420K |
| 代理商： | 2SK3132 |
2SK3132
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3132
Chopper Regulator DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.07 (typ.)
High forward transfer admittance
: |Yfs| = 33 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
50
A
DCDrain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc
= 25°C)
PD
250
W
Single pulse avalanche energy
(Note 2)
EAS
525
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.5
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 H, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3136-E | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3175A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3175A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3229 | 60 A, 80 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3288 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3132_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3133 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3133L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復。