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參數(shù)資料
| 型號： | 38D5 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| 中文描述： | 單芯片8位CMOS微機 |
| 文件頁數(shù)： | 73/141頁 |
| 文件大?。?/td> | 2027K |
| 代理商： | 38D5 |
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Rev.3.01
REJ03B0158-0301
Aug 08, 2007
Page 73 of 134
38D5 Group
FLASH MEMORY MODE
The 38D5 Group flash memory version has the flash memory
that can be rewritten with a single power source.
For this flash memory, three flash memory modes are available
in which to read, program, and erase: the parallel I/O and
standard serial I/O modes in which the flash memory can be
manipulated using a programmer and the CPU rewrite mode in
which the flash memory can be manipulated by the Central
Processing Unit (CPU). For details of each mode, refer to the
next and after pages. Contact the manufacturer of your
programmer for the programmer. Refer to the user's manual of
your programmer for details on how to use it.
This flash memory version has some blocks on the flash memory
as shown in Figure 70 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU
operation control program, the flash memory has a Boot ROM
area that is used to store a program to control rewriting in CPU
rewrite and standard serial I/O modes. This Boot ROM area has
had a standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application
system. This Boot ROM area can be rewritten in only parallel I/O
mode.
Performance overview
Table 16 lists the performance overview of the 38D5 Group flash
memory version.
NOTE:
1. The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory.
This Boot ROM area can be erased and written in only parallel I/O mode.
Table 16
Performance overview of 38D5 Group flash memory version
Parameter
Function
Power source voltage (Vcc)
Program/Erase VPP voltage (V
PP
)
Flash memory mode
V
CC
= 2.7 to 5.5 V
V
CC
= 2.7 to 5.5 V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU
rewrite mode
Refer to Figure 70.
Not divided (4K bytes)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100
Available in parallel I/O mode and standard serial I/O mode
Erase block division
User ROM area/Data ROM area
Boot ROM area
(1)
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
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| 38D5_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Standard Characteristics Example |
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| 38D511G015FE6AD | 制造商:Sprague/Vishay 功能描述:AL015X751 |
| 38D5-FMV | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Standard Characteristics (Flash Memory Version) |
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