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參數(shù)資料
| 型號： | 4N35 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 電容 |
| 英文描述： | Tantalum Chip Capacitor |
| 中文描述： | 鉭芯片電容器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 157K |
| 代理商： | 4N35 |
www.vishay.com
2
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6.0
V
Forward current
IF
60
mA
Surge current
≤ 10 sI
FSM
2.5
A
Power dissipation
Pdiss
100
mW
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
VCEO
70
V
Emitter-base breakdown
voltage
VEBO
7.0
V
Collector current
IC
50
mA
(t
≤ 1.0 ms)
IC
100
mA
Power dissipation
Pdiss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature
max. 10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
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