參數(shù)資料
型號(hào): 6FLR10MS02
廠商: VISHAY INTERTECHNOLOGY INC
元件分類(lèi): 整流器
英文描述: 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
封裝: ROHS COMPLIANT, DO-4, 1 PIN
文件頁(yè)數(shù): 7/13頁(yè)
文件大?。?/td> 2066K
代理商: 6FLR10MS02
Document Number: 93138
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 26-Sep-08
3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Note
(1) JEDEC registered values
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
1N3889.
1N3893.
6FL..
12FL..
16FL..
UNITS
S02
S05
Maximum reverse
recovery time
trr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
150
-
ns
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
300 (1)
200
500
Maximum peak
recovery current
IRM(REC)
IFM = π x rated IF(AV)
4 (1)
5 (1)
--
Maximum reverse
recovery charge
Qrr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
400
350
-
nC
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
400
-
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
UNITS
Maximum junction operating
temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
2.0
1.6
°C/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth,
flat and greased
0.5
Allowable mounting torque
Not lubricated threads
1.5 + 0 - 10 %
(13)
N m
(lbf in)
Lubricated threads
1.2 + 0 - 10 %
(10)
Approximate weight
7g
0.25
oz.
Case style
JEDEC
DO-203AA (DO-4)
相關(guān)PDF資料
PDF描述
6F60M 6 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
6F10 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
6F80 6 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA
6FLR40S02 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
6FR100 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA
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