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參數(shù)資料
| 型號： | APT38N60BC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 600 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 147K |
| 代理商： | APT38N60BC6 |
050-7207
Rev
A
6-2010
Typical Performance Curves
APT38N60B_SC6
0.7
0.8
0.9
1.0
1.1
1.2
- 50
0
50
100
150
0.85
0.90
.95
.00
1.05
1.10
.15
.20
-50
0
50
100
150
0
0.50
1.00
1.50
2.00
2.50
3.00
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
9 10
0
20
40
60
80
100
0
5
10
15
20
25
30
6.5V
10 &15V
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 4, R
DS(ON) vs Drain Current
R
DS(on)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
T
J, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
4.5V
5.5V
6V
5V
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 38A
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
0.1
1
10
100
800
1
10
100
800
1ms
100ms
100s
10ms
10s
7V
R
ds(on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT38N60SC6 | 38 A, 600 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4012BVR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4012SVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4012BVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT4012BVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT38N60SC6 | 制造商:Microsemi Corporation 功能描述:APT38N60SC6 - Bulk |
| APT39F60J | 功能描述:MOSFET N-CH 600V 42A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT39M60J | 功能描述:MOSFET N-CH 600V 42A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT39M60J_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT400 | 制造商:Carlo Gavazzi 功能描述:TERMINAL COVER FOR TOR 制造商:Altech Corporation 功能描述: |
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