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參數(shù)資料
| 型號： | AUIRF1324S-7PTRL |
| 元件分類： | JFETs |
| 英文描述： | 240 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-7 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 290K |
| 代理商： | AUIRF1324S-7PTRL |
03/25/10
www.irf.com
1
HEXFET Power MOSFET
AUIRF1324S-7P
GD
S
Gate
Drain
Source
D2Pak 7 Pin
G
S
D
S
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
V(BR)DSS
24V
RDS(on) typ.
0.8m
max.
1.0m
ID (Silicon Limited) 429A c
ID (Package Limited) 240A
PD - 96296
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
300
1.6
-55 to + 175
± 20
2.0
Max.
429
303
1640
240
A
°C
°C/W
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRF1324S-7P | 240 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1324S | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1324L | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1324STRR | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1324STRL | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF1324S-7PTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324STRL | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324STRL7P | 功能描述:MOSFET NCH 24V 340A D2PAK 制造商:infineon technologies 系列:汽車級，AEC-Q101，HEXFET? 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:24V 電流 - 連續(xù)漏極（Id）（25°C 時）:340A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.65 毫歐 @ 195A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:240nC @ 10V 不同 Vds 時的輸入電容（Ciss）:7590pF @ 24V 功率 - 最大值:300W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK（TO-263） 標(biāo)準(zhǔn)包裝:800 |
| AUIRF1324STRR | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324WL | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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