電容量C和介質(zhì)損耗或品質(zhì)因素測試條件 | 25℃,1Vrms,1MHz (Ⅰ類) 1KHz (Ⅱ類) |
使用溫度(operating temperature) | -25℃~+125℃ |
額定電壓(rated voltage) | 4~15KVDC |
介質(zhì)損耗(tgδ)或品質(zhì)因素(dissipation factor) | Y5P、Y5U、Y5V:tgδ≤2.0% BN: tgδ≤0.5% Y5R: tgδ≤0.2% SL、YL:Cr<30pF,Q≥400+20C;Cr≥30pF,Q≤1000. |
絕緣電阻(insulation resistance)(IR) | IR≥10000MΩ(500VDC) |
耐電壓(voltage proof) | 1.5Ur |
溫度特性(temperature characteristic) | SL、YL、Y5P、Y5U、Y5V、BN、Y5R |