詳細(xì)信息
熱銷原裝長電三極管2D(MMBTA92)原廠原裝正品，假一賠十！詳細(xì)電氣參數(shù)可致電索?。?br>MMBTA92 TRANSISTOR (PNP)
FEATURES
High voltage transistor
MARKING:2D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -300 V
VCEO Collector-Emitter Voltage -300 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -300 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
R?JA Thermal Resistance, junction to Ambient 410 ℃/mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 μA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA
hFE(1) VCE= -10V, IC= -1mA 60
DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200
hFE(3) VCE= -10V, IC=-30mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V
Transition frequency fT
VCE=-20V, IC= -10mA
f=30MHz
50 MHz