詳細信息
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V
Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE=30V, VBE(off)=3V 50 nA
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA
hFE(1)
VCE=1V,IC=10mA 100 400
hFE(2)
VCE=1V,IC=50mA 60
hFE(3)
VCE=1V,IC=100mA 30
VCE(sat)
IC=50mA,IB=5mA 0.3 V
DC current gain
VBE(sat)
IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 250 MHz
Delay time td 35 nS
Rise time tr
VCC=3V,VBE=-0.5V,IC=10mA ,
IB1=-IB2= 1mA
35 nS
Storage time tS 200 nS
Fall time tf
VCC=3V,IC=10mA , IB1=-IB2= 1mA
50 nS
CLASSIFICATION OF hFE1
Rank O Y G
Range 100-200 200-300 300-400