詳細信息
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V
Collector-emitter breakdown
voltage
V(BR)CEO* IC= 1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V
Collector cut-off current ICBO VCB= 120V, IE=0 50 nA
Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA
hFE1* VCE=5V, IC=1mA 80
DC current gain hFE2* VCE=5V, IC =10mA 80 250
hFE3 VCE=5V, IC=50mA 30
IC=10mA, IB=1mA 0.15
Collector-emitter saturation voltage VCEsat*
IC=50mA, IB=5mA 0.2
V
IC=10mA, IB= 1mA 1
Base-emitter saturation voltage VBEsat*
IC=50mA, IB= 5mA 1
V
Transition frequency fT VCE=10V,IC=10mA,f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF
Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF
Noise figure NF
VCE=5V,Ic=0.25mA,
f=10Hz to 15.7KHz,Rs=1kΩ
8 dB