TIP34 無錫固電半導體ISC大功率三極管

iscSilicon PNP Power Transistor                      TIP34   
 DESCRIPTION
·DC Current Gain-
: h_FE= 40(Min)@I_C= -1
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -40V(Min)
·Complement to Type TIP33
 
 
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
 
 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-40	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current -Continuous	-10	A
ICM	Collector Current-peak	-15	A
IB	Base Current	-3	A
PC	Collector Power Dissipation@ TC=25℃	80	W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-65~150	℃

 
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	1.56	℃/W

iscSilicon PNP Power Transistor                     TIP34   
ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= -30mA; IB= 0	-40		V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= -3A; IB= -0.3A		-1.0	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= -10A; IB= -2.5A		-4.0	V
VBE(on)-1	Base-Emitter On Voltage	IC= -3A; VCE= -4V		-1.6	V
VBE(on)-2	Base-Emitter On Voltage	IC= -10A; VCE= -4V		-3.0	V
ICEO	Collector Cutoff Current	VCE= -30V; IB= 0		-0.7	mA
ICES	Collector Cutoff Current	VCE= -40V; VEB= 0		-0.4	mA
IEBO	Emitter Cutoff Current	VEB= -5V; IC= 0		-1.0	mA
hFE-1	DC Current Gain	IC= -1A; VCE= -4V	40
hFE-2	DC Current Gain	IC= -3A; VCE= -4V	20	100
fT	Current-Gain—Bandwidth Product	IC= -0.5A; VCE= -10V; ftest= 1.0MHz	3		MHz