2SC2246 無錫固電ISC 超聲波功率三極管

iscSilicon NPN Power Transistor                 2SC2246     
 
DESCRIPTION                                            
·HighCollector-Emitter Sustaining Voltage-
  : V_CEO(SUS)= 400V (Min)
·High Switching Speed
 
APPLICATIONS
·Power switching
·Power amplification
·Power driver
 
 

Absolute maximum ratings(T_a=25℃)

SYMBOL	PARAMETER	MAX	UNIT
VCBO	Collector-Base Voltage	450	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	15	A
ICM	Collector Current-Peak	30	A
IB	Base Current-Continuous	6	A
PC	Collector Power Dissipation @TC=25℃	100	W
Tj	Junction Temperature	200	℃
Tstg	StorageTemperature Range	-65~200	℃

 
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	1.0	℃/W

 
 
iscSilicon NPN Power Transistor                 2SC2246
 
 
ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 100mA; L= 25mH	400			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 6A; IB= 1.2A			1.2	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 6A; IB= 1.2A			1.5	V
hFE	DC Current Gain	IC= 5A; VCE= 2V	12		60
hFE	DC Current Gain	IC= 10A; VCE= 2V	6		30
ICBO	Collector Cutoff Current	VCB= 450V; IE= 0 TC=125℃			1.0 4.0	mA
ICEO	Collector Cutoff Current	VCE= 400V; IB= 0			5.0	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			1.0	mA
Switching Times
tr	Rise  Time	IC= 6A; IB1=- IB2= 1.2A			1.0	μs
tstg	Storage Time				2.0	μs
tf	Fall Time				1.0	μs