詳細信息
RN1101FT 帶阻尼三極管 NPN 50V 0.1A 4.7K 4.7K SOT-623 TOSHIBA
型號 Part No. | RN1101FT |
絲印/代碼/打字/標記/印記 MARKING Code | XA |
廠家 Manufacturer | TOSHIBA |
一級分類 1.general categories | 三極管 Bipolar Transistor |
二級分類 2.subcategories | 帶阻尼NPN NPN Bipolar Digital Transistor (BRT) |
集電極-基極反向擊穿電壓V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集電極-發(fā)射極反向擊穿電壓V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集電極連續(xù)輸出電流IC Collector Current(IC) | 100mA/0.1A |
基極輸入電阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
基極-發(fā)射極輸入電阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
電阻比(R1/R2) Resistance Ratio | 1 |
直流電流增益hFE DC Current Gain(hFE) | 30 |
截止頻率fT Transtion Frequency(fT) | 250MHz |
耗散功率Pc Power Dissipation | 0.1W/100mW |
封裝 Package/Case | SOT-623/TESM |
Description & Applications | Features ? Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ? High-density mount is possible because of devices housed in very thin TESM packages. ? Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ? Wide range of resistor values are available to use in various circuit designs. ? Complementary to RN2101FT |
描述與應用 | 特性 ?開關(guān),逆變電路,接口電路和驅(qū)動器電路應用 ?高密度安裝是可能因為設備安置非常薄TESM包。 ?將偏置電阻晶體管減少了部件數(shù)量。 減少零件計數(shù)使能越來越緊湊設備和制造節(jié)省組裝成本。 ?電阻值范圍廣,可使用在各種電路設計。 ?對管是RN2101FT |