詳細(xì)信息
0603 850nm 紅外貼片LED /0603 850nm infrared chip SMD LED
Electro-Optical Characteristics (Ta=25℃)
Parameter | Symbol | Condition | Min. | type | Max | Unit |
Collector – Emitter Breakdown Voltage | BVCEO | IC=100μA Ee=0mW/cm2 | 30 | --- | --- | V |
Emitter-Collector Breakdown Voltage | BVECO | IE=100μA Ee=0mW/cm2 | 5 | --- | --- | V |
Open-Circuit Voltage | VOC | Ee=5m W/cm2 λp=940nm | --- | 0.35 | -- | V |
Rise Time | tr | VCE=5V IC=1mA RL=1000Ω | --- | 50 | --- | nS |
Fall Time | tf | -- | 50 | --- | ||
Dark Current | Id | Ee=0m W/cm2 VR=10V | 5 | 30 | nA | |
Wavelength of Peak Sensitivity | λp | --- | --- | 940 | --- | nm |
Rang of Spectral Bandwidth | λ0.5 | ---- | --- | 400-1200 | --- | nm |
Short- Circuit Current | ISC | Ee=1m W/cm2 λp=940nm | --- - | 18 | -- | μA |
Reverse Light Current | Id | Ee=1m W/cm2 λp=940nm | 10.2 | 18 | -- |