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FUJI全新原裝正品 進(jìn)口模塊系列 7MBP100RA120
FUJI全新原裝正品 進(jìn)口模塊系列 7MBP100RA120
7MBP100RA120 產(chǎn)品規(guī)格 參數(shù)
1200V / 100A 7 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
ItemSymbol Rating Unit
Min. Max.
DC bus voltage VDC 0 900 V
DC bus voltage (surge) VDC(surge) 0 1000V
DC bus voltage (short operating) VSC 200 800 V
Collector-Emitter voltage
DB Reverse voltage
VCES
VR
0
1200
1200V
V
INV Collector current DCIC 100A
1msICP 200A
DC-IC 100A
Collector power dissipation One transistor PC 735W
DB Collector current DCIC 50A
1msICP 100A
Forward current of DiodeIF 50A
Collector power dissipation One transistor PC 400W
Junction temperature Tj 150°
C
Input voltage of power supply for Pre-Driver VCC *1 0 20V
Input signal voltage Vin *2 0 VzV
Input signal current Iin 1mA
Alarm signal voltage VALM *3 0 VccV
Alarm signal current IALM *4 15mA
Storage temperature Tstg -40 125°C
Operating case temperature Top -20 100 °C
Isolating voltage (Case-Terminal) Viso *5 AC2.5
kV
Screw torque Mounting (M5) 3.5
*6 N·m
Terminal (M5) 3.5
*6 N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal inputICES VCE=1200V input terminal open – – 1.0 mA
Collector-Emitter saturation voltageVCE(sat) Ic=100A – – 2.6 V
Forward voltage of FWD VF -Ic=100A – – 3.0 V
DB Collector current at off signal inputICES VCE=1200V input terminal open – – 1.0 mA
Collector-Emitter saturation voltageVCE(sat) Ic=50A – – 2.6 V
Forward voltage of Diode VF -Ic=50A – – 3.3 V
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7MBP100RA120 IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit) Iccp fsw=0 to 15kHz Tc=-20 to 100°C *7 3 18mA
Power supply current of N-line side three Pre-driver ICCN fsw=0 to 15kHz Tc=-20 to 100°C *7 10 65mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70V
OFF 1.70 2.05 2.40V
Input zener voltage VZ Rin=20k ohm 8.0
V
Over heating protection temperature level TCOH VDC=0V, Ic=0A, Case temperature Fig.1 110 125°
C
Hysteresis TCH 20
°
C
IGBT chips over heating protection temperature level TjOH surface of IGBT chips 150 °
C
Hysteresis TjH 20
°
C
Collector current protection level INVIOC Tj=125°C 150 A
DB IOC Tj=125°C 75 A
Over current protection delay time tDOC Tj=25°C Fig.2 10
μs
Under voltage protection level VUV 11.0 12.5V
Hysteresis VH 0.2 V
Alarm signal hold time tALM 1.5 2 ms
SC protection delay time tSC Tj=25°C Fig.3 12
μs
Limiting resistor for alarm RALM14251500 1575 ohm
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT) ton IC=100A, VDC=600V 0.3 --μs
toff -3.6
μs
Switching time (FWD) trr IF=100A, VDC=600V-0.4
μs
Thermal characteristics(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance INV IGBTRth(j-c) -0.17°C/W
FWD Rth(j-c) -0.36°C/W
DB IGBT Rth(j-c) -0.31°C/W
Case to fin thermal resistance with compound Rth(c-f) 0.05 -°C/W
Recommendable value
Item Symbol Min. Typ. Max. Unit
DC bus voltage VDC 200 -800 V
Operating power supply voltage range of Pre-driver VCC 13.5 15 16.5 V
Switching frequency of IPM fSW 1 20
kHzScrew torque Mounting (M5) -2.5 -3.0 N·m
Terminal (M5) -2.5 -3.0 N·m
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7MBP100RA120 IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 920g
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7MBP100RA120 IGBT-IPM
control circuit
Characteristics (Representative)
0
10
20
30
40
50
60
70
0 5 10 15 20 25
Power supply current vs. Switching frequency
Tj=100°C
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
N-side
P-side
Power supply current : Icc (mA)
Switching frequency : fsw (kHz)
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input signal threshold voltage
vs. Power supply voltage
Input signal threshold voltage
Power supply voltage : Vcc (V)
Tj=25°C
Tj=125°C
} Vin(on)
} Vin(off)
: Vin(on),Vin(off) (V)
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
Under voltage vs. Junction temperature
Under voltage : VUVT (V)
Junction temperature : Tj (°C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
Under voltage hysterisis vs. Jnction temperature
Under voltage hysterisis : VH (V)
Junction temperature : Tj (°C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Alarm hold time vs. Power supply voltage
Alarm hold time : tALM (mSec)
Power supply voltage : Vcc (V)
Tj=125°C
Tj=25°C
0
50
100
150
200
12 13 14 15 16 17 18
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Over heating protection : TcOH,TjOH (°C)
Power supply voltage : Vcc (V)
TjOH
TcOH
TcH,TjH
OH hysterisis : TcH,TjH (°C)
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7MBP100RA120 IGBT-IPM
Inverter
0
20
40
60
80
100
120
140
160
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter voltage
Tj=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter voltage : Vce (V)
0
20
40
60
80
100
120
140
160
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter voltage
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter voltage : Vce (V)
10
100
1000
10000
0 20 40 60 80 100 120 140 160
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C
Switching time : ton,toff,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
10
100
1000
10000
0 20 40 60 80 100 120 140 160
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
Switching time : ton,toff,tf (nSec) Collector current : Ic (A)
toff
ton
tf
0
20
40
60
80
100
120
140
160
0 0.5 1 1.5 2 2.5 3
Forward current vs. Forward voltage
125°C 25°C
Forward Current : If (A)
Forward voltage : Vf (V)
10
100
0 20 40 60 80 100 120 140 160
Reverse recovery characteristics
trr,Irr vs. IF
Reverse recovery current : Irr(A)
Reverse recovery time : trr(nSec)
Forward current : IF(A)
trr125°C
trr25°C
Irr125°C
Irr25°C
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7MBP100RA120 IGBT-IPM
0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal resistance
Thermal resistance : Rth(j-c) (°C/W)
Pulse width :Pw (sec)
FWD
IGBT
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000 1200 1400
Reversed biased safe operating area
Vcc=15V,Tj 125°C
Collector current : Ic (A)
Collector-Emitter voltage : Vce (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0
100
200
300
400
500
600
700
800
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device)
Collecter Power Dissipation : Pc (W)
Case Temperature : Tc (°C)
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160
Power derating for FWD
(per device)
Collecter Power Dissipation : Pc (W)
Case Temperature : Tc (°C)
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140 160
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collector current : Ic (A)
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140 160
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collector current : Ic (A)
= <
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7MBP100RA120 IGBT-IPM
Over current protection vs. Junction temperature
Vcc=15V
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140
Over
current
protection
level
: Ioc(
A)
Junction temperature : Tj(°C)
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Brake
7MBP100RA120 IGBT-IPM
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter voltage
Tj=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter voltage : Vce (V)
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter voltage
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter voltage : Vce (V)
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
Reversed biased safe operating area
Vcc=15V,Tj 125°C
Collector current : Ic (A)
Collector-Emitter voltage : Vce (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device)
Collecter Power Dissipation : Pc (W)
Case Temperature : Tc (°C)
0
50
100
150
200
0 20 40 60 80 100 120 140
Over current protection vs. Junction temperature
Vcc=15V
Junction temperature : Tj(°C)
Over current protection level : Ioc(A)
0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal resistance
Thermal resistance : Rth(j-c) (°C/W)
Pulse width :Pw (sec)
IGBT
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