無錫固電ISC T430晶體管 iscsemi

T430三極管，TO-3PN
DESCRIPTION                                             
·Collector-Emitter Breakdown Voltage-
  : V_(BR)CEO= 400V(Min)
·High DC Current Gain
  : h_FE= 800(Min.)@ I_B= 4A
·Low Collector Saturation Voltage
  : V_CE(sat)= 1.5V(Max.)@ I_C= 3A
APPLICATIONS
·Switching for dynamotor excitation
·Automotive ignition
·Switching regulator
·Motor control applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	600	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	10	A
IB	Base Current-Continuous	2	A
PC	Collector Power Dissipation @ TC=25℃	100	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 50mA; IB= 0	400			V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 3A; IB= 0.6A			1.5	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 7A; IB= 0.14A			1.8	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 7A; IB= 0.14A			2.5	V
ICBO	Collector Cutoff Current	VCB= 600V; IE= 0			100	μA
ICEO	Collector Cutoff Current	VCE= 400V; IB= 0			500	μA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			5.0	mA
hFE	DC Current Gain	IC= 4A; VCE= 4V	800