詳細(xì)信息
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: PW≤300μs, Duty cycle≤2% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
V CEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 130 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10mA, IB = 0 400 V
IEBO Emitter Cut-off Current VEB = 7V, IC = 0 1 mA
hFE DC Current Gain VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
8
6
40
30
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
1.2
1.6
V
V
Cob Output Capacitance VCB = 10V , f = 0.1MHz 180 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn ON Time VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6Ω
1.1 μs
tSTG Storage Time 3 μs
tF Fall Time 0.7 μs