無錫固電ISC 音響用大功率三極管2SD998

DESCRIPTION                                             
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 120V(Min)
·Good Linearity of h_FE
·Complement to Type 2SB778
 
 
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
 
 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	120	V
VCEO	Collector-Emitter Voltage	120	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	10	A
IB	Base Current-Continuous	1	A
PC	Collector Power Dissipation @ TC=25℃	80	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

 
ELECTRICAL CHARACTERISTICS
 
T_C=25℃unless otherwise specified
 

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 50mA ; IB= 0	120			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 5.0A; IB= 0.5A			2.5	V
VBE(on)	Base-Emitter On Voltage	IC= 5A ; VCE= 5V			1.5	V
ICBO	Collector Cutoff Current	VCB= 120V ; IE= 0			10	μA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			10	μA
hFE	DC Current Gain	IC= 1A ; VCE= 5V	55		160
COB	Output Capacitance	IE= 0 ; VCB= 10V;ftest= 1.0MHz		170		pF
fT	Current-Gain—Bandwidth Product	IC= 1A ; VCE= 5V		12		MHz

 
 
 
u h_FEClassifications
 

R	O
55-110	80-160