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參數(shù)資料
| 型號(hào)： | CS8312 |
| 廠商： | ZF Electronics Corporation |
| 英文描述： | IGBT Ignition Predriver with Dynamic Current Regulation |
| 中文描述： | IGBT的點(diǎn)火預(yù)驅(qū)動(dòng)器，具有動(dòng)態(tài)電流調(diào)節(jié) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 139K |
| 代理商： | CS8312 |
1
Features
Gate
Driver
Latch
V
REF
Control
Logic
V
CC
OUT
SENSE+
SENSED
CLI
Gnd
FLAG
CTRL
V
T
V
T
I
I
μP Compatible Inputs
Adjustable Current Limit
Thresholds
External Sense Resistor
Flag Signal to Indicate
Output Status
I
I
Package Options
8L PDIP & SO Narrow
C
IGBT Ignition Predriver
with Dynamic Current Regulation
Description
1
FLAG
SENSE+
SENSED
Gnd
V
CC
CTRL
CLI
OUT
Block Diagram
Absolute Maximum Ratings
The CS8312 is a bipolar micropro-
cessor interface IC designed to
drive an IGBT (or logic level
MOSFETs) powering large induc-
tive loads in harsh operating envi-
ronments. The ICs dynamic cur-
rent limit function lets the micro-
processor adjust the current limit
threshold to the real time needs of
the system.
CLI, the current limit input, sets the
current limit for the IGBT high or
low as directed by the system
microprocessor. CLI also raises and
lowers the threshold on the diag-
nostic FLAG output signal. The
FLAG output signals the micropro-
cessor when the current level
approaches current limit on the
IGBT. The CTRL input enables the
FLAG function.
CS8312
Supply Voltage.................................................................................-0.3V to +12V
Digital Input Currents....................................................................................2mA
Internal Power Dissipation (T
A
= 25C) .................................................700mW
Junction Temperature Range.....................................................-40C to +150C
Storage Temperature Range ......................................................-55C to +165C
Lead Temperature Soldering
Wave Solder(through hole styles only).............10 sec. max, 260C peak
Reflow (SMD styles only).............60 sec. max above 183C, 230C peak
Electrostatic Discharge (Human Body Model) ............................................2kV
A
Company
¨
Rev. 4/7/97
Cherry Semiconductor Corporation
2000 South County Trail, East Greenwich, RI 02818
Tel: (401)885-3600 Fax: (401)885-5786
Email: info@cherry-semi.com
Web Site: www.cherry-semi.com
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| CS8312YDR8 | IGBT Ignition Predriver with Dynamic Current Regulation |
| CS8312YD8 | IGBT Ignition Predriver with Dynamic Current Regulation |
| CS8312YD8 | IGBT Ignition Predriver |
| CS8312YDR8 | IGBT Ignition Predriver |
| CS8312YN8 | IGBT Ignition Predriver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CS8312/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:IGBT Ignition Predriver with Dynamic Current Regulation |
| CS-8312D8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ignition Circuit |
| CS-8312N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ignition Circuit |
| CS8312YD8 | 制造商:CHERRY 制造商全稱:CHERRY 功能描述:IGBT Ignition Predriver with Dynamic Current Regulation |
| CS8312YDR8 | 功能描述:IC PREDRIVER IGBT IGNITION 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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