參數(shù)資料
型號(hào): CXXXUT200-SXXXX
廠商: Cree, Inc.
英文描述: Cree㈢ UltraThin⑩ LED
中文描述: Cree公司的LED㈢超?、?/td>
文件頁數(shù): 1/5頁
文件大小: 282K
代理商: CXXXUT200-SXXXX
Subject to change without notice.
www.cree.com
FEATURES
Small Chip – 200 x 200 x 85 μm
UT LED Performance
5.5 mW min. (455–475 nm) Blue
Low Forward Voltage
2.9 V Typical at 5 mA
Single Wire Bond Structure
Class 2 ESD Rating
APPLICATIONS
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
Cree
UltraThin LED
Data Sheet
C
xxx
UT200-S
xxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary GSiC
substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
D
C
xxx
UT200-S
xxxx
Chip Diagram
Top View
Bottom View
GSiC LED Chip
200 x 200 μm
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Gold Bond Pad
90 μm Diameter
Die Cross Section
Cathode (-)
Anode (+)
SiC Substrate
Bottom Surface
115 x 115 μm
Mesa (junction)
150 x 150 μm
InGaN
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