參數(shù)資料
型號(hào)： CY7C1355C-100AXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
中文描述： 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù)： 7/28頁(yè)
文件大?。?/td> 456K
代理商： CY7C1355C-100AXC
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 7 of 28
Pin Definitions
Name
I/O
Input-
Description
A
0
, A
1
, A
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Address Inputs used to select one of the address locations
. Sampled at the rising edge
of the CLK. A
[1:0]
are fed to the two-bit burst counter.
Byte Write Inputs, active LOW
. Qualified with WE to conduct Writes to the SRAM. Sampled
on the rising edge of CLK.
Write Enable Input, active LOW
. Sampled on the rising edge of CLK if CEN is active LOW.
This signal must be asserted LOW to initiate a write sequence.
Advance/Load Input
. Used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW,
a new address can be loaded into the device for an access. After being deselected, ADV/LD
should be driven LOW in order to load a new address.
Clock Input
. Used to capture all synchronous inputs to the device. CLK is qualified with
CEN. CLK is only recognized if CEN is active LOW.
Chip Enable 1 Input, active LOW
. Sampled on the rising edge of CLK. Used in conjunction
with CE
2
, and CE
3
to select/deselect the device.
Chip Enable 2 Input, active HIGH
. Sampled on the rising edge of CLK. Used in conjunction
with CE
1
and CE
3
to select/deselect the device.
Chip Enable 3 Input, active LOW
. Sampled on the rising edge of CLK. Used in conjunction
with CE
1
and
CE
2
to select/deselect the device.
Output Enable, asynchronous input, active LOW
. Combined with the synchronous logic
block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are
allowed to behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as
input data pins. OE is masked during the data portion of a write sequence, during the first
clock when emerging from a deselected state, when the device has been deselected.
Clock Enable Input, active LOW
. When asserted LOW the Clock signal is recognized by
the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN
does not deselect the device, CEN can be used to extend the previous cycle when required.
ZZ “Sleep” Input
. This active HIGH input places the device in a non-time critical “sleep”
condition with data integrity preserved. For normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull-down.
Bidirectional Data I/O lines
. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise of the
Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the
pins behave as outputs. When HIGH, DQ
s
and DQP
X
are placed in a tri-state condition.The
outputs are automatically tri-stated during the data portion of a Write sequence, during the
first clock when emerging from a deselected state, and when the device is deselected,
regardless of the state of OE.
Bidirectional Data Parity I/O Lines.
Functionally, these signals are identical to DQ
s
.
During
Write sequences, DQP
X
is controlled by BW
X
correspondingly.
Input Strap Pin
Mode Input. Selects the burst order of the device
. When tied to Gnd selects linear burst
sequence. When tied to V
DD
or left floating selects interleaved burst sequence.
Power Supply
Power supply inputs to the core of the device
.
I/O Power
Supply
Ground
Ground for the device
.
JTAG serial output
Synchronous
feature is not being utilized, this pin should be left unconnected. This pin is not available on
TQFP packages.
JTAG serial input
Synchronous
is not being utilized, this pin can be left floating or connected to V
DD
through a pull up resistor.
This pin is not available on TQFP packages.
BW
A
, BW
B
BW
C
, BW
D
WE
ADV/LD
CLK
Input-
Clock
Input-
CE
1
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
CE
2
CE
3
OE
CEN
Input-
Synchronous
ZZ
Input-
Asynchronous
DQ
s
I/O-
Synchronous
DQP
X
I/O-
Synchronous
MODE
V
DD
V
DDQ
Power supply for the I/O circuitry
.
V
SS
TDO
Serial data-out to the JTAG circuit
. Delivers data on the negative edge of TCK. If the JTAG
TDI
Serial data-In to the JTAG circuit
. Sampled on the rising edge of TCK. If the JTAG feature
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1355C-100AXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BGXC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BGXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BZC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BZI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1355C-100AXCT 功能描述:IC SRAM 9MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1355C-100AXI 制造商:Cypress Semiconductor 功能描述:
CY7C1355C-100BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1355C-100BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1355C-133AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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