參數資料
型號: CY7C1355C-133AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
中文描述: 256K X 36 ZBT SRAM, 6.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁數: 10/28頁
文件大?。?/td> 456K
代理商: CY7C1355C-133AXC
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 10 of 28
NOP/WRITE ABORT (Begin Burst)
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SLEEP MODE
None
Next
Current
None
L
X
X
X
H
X
X
X
L
X
X
X
L
L
L
H
L
H
X
X
L
X
X
X
H
H
X
X
X
X
X
X
L
L
H
X
L->H
L->H
L->H
X
Tri-State
Tri-State
Tri-State
Partial Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1355C)
WE
H
L
L
L
L
L
L
BW
A
X
H
L
H
H
H
L
BW
B
X
H
H
L
H
H
L
BW
C
X
H
H
H
L
H
L
BW
D
X
H
H
H
H
L
L
Read
Write No bytes written
Write Byte A – (DQ
A
and DQP
A
)
Write Byte B – (DQ
B
and DQP
B
)
Write Byte C – (DQ
C
and DQP
C
)
Write Byte D – (DQ
D
and DQP
D
)
Write All Bytes
Truth Table for Read/Write
[2, 3,9]
Function (CY7C1357C)
WE
H
L
L
L
L
BW
A
X
H
H
H
L
BW
B
X
H
H
H
L
Read
Write - No bytes written
Write Byte A – (DQ
A
and DQP
A
)
Write Byte B – (DQ
B
and DQP
B
)
Write All Bytes
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW
X
is valid. Appropriate write will be done based on which byte write is active.
Truth Table
[2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used
CE
1
CE
2
CE
3
ZZ
ADV/LD WE BW
X
OE CEN CLK
DQ
[+] Feedback
相關PDF資料
PDF描述
CY7C1355C-133AXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1355C-133BGXC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1355C-133BGXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1355C-133BZXC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1355C-133BZXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
相關代理商/技術參數
參數描述
CY7C1355C-133AXCKJ 制造商:Cypress Semiconductor 功能描述:
CY7C1355C-133AXCT 功能描述:靜態(tài)隨機存取存儲器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1355C-133AXI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1355C-133AXIT 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1355C-133BGC 功能描述:靜態(tài)隨機存取存儲器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray