參數(shù)資料
型號(hào)： CY7C1357C-100AXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
中文描述： 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù)： 15/28頁(yè)
文件大?。?/td> 456K
代理商： CY7C1357C-100AXC
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 15 of 28
Scan Register Sizes
Register Name
Bit Size (x36)
3
1
32
69
69
Bit Size (x18)
3
1
32
69
69
Instruction
Bypass
ID
Boundary Scan Order (119-ball BGA package)
Boundary Scan Order (165-ball FBGA package)
Identification Codes
Instruction
EXTEST
Code
000
Description
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant.
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1 compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
IDCODE
001
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
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相關(guān)PDF資料
PDF描述
CY7C1357C-100AXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BGC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BGI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1356C-200BZC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BZI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1357C-100AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C-100BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C-100BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C-100BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C133AXC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 6.5ns 100-Pin TQFP Tray
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