參數(shù)資料
型號(hào): CY7C1357C-100AXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
中文描述: 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù): 21/28頁(yè)
文件大?。?/td> 456K
代理商: CY7C1357C-100AXI
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 21 of 28
Switching Waveforms
Read/Write Waveforms
[22, 23, 24]
Notes:
22.For this waveform ZZ is tied LOW.
23.When CE is LOW, CE
is LOW, CE
is HIGH and CE
is LOW. When CE is HIGH, CE
is HIGH or CE
is LOW or CE
is HIGH.
24.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tCYC
tCL
tCH
10
CE
tCEH
tCES
WE
CEN
tCENH
tCENS
BW
X
ADV/LD
tAH
tAS
ADDRESS
A1
A2
A3
A4
A5
A6
A7
tDH
tDS
DQ
COMMAND
tCLZ
D(A1)
D(A2)
Q(A4)
Q(A3)
D(A2+1)
tDOH
tCHZ
tCDV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE
tOEV
tOELZ
tOEHZ
DON’T CARE
UNDEFINED
D(A5)
tDOH
Q(A4+1)
D(A7)
Q(A6)
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1357C-100BGC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-100BGI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1356C-200BZC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BZI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BZXC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
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