- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379064 > CY7C1357C-133AXC (CYPRESS SEMICONDUCTOR CORP) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1357C-133AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 456K |
| 代理商： | CY7C1357C-133AXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 28 of 28
Document History Page
Document Title: CY7C1355C/CY7C1357C 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
Document Number: 38-05539
Orig. of
Change
**
242032
See ECN
RKF
New data sheet
*A
332059
See ECN
PCI
Changed Boundary Scan Order to match the B rev of these devices
Removed description on Extest Output Bus Tri-state
Removed 117 MHz Speed Bin
Changed I
DDZZ
from 35 mA to 50 mA on Pg # 9
Changed I
SB1
and I
SB3
from 40 mA to 110 and 100 mA respectively
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Modified V
OL,
V
OH
test conditions
Corrected I
SB4
Test Condition from (V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V) to (V
IN
≥
V
IH
or V
IN
≤
V
IL
) in the Electrical Characteristic Table on Pg #18
Changed
Θ
JA
and
Θ
Jc
for TQFP Package from 25 and 9 °C/W to 29.41 and
6.13 °C/W
respectively
Changed
Θ
JA
and
Θ
Jc
for BGA Package from 25 and 6 °C/W to 34.1 and 14.0
°C/W
respectively
Changed
Θ
JA
and
Θ
Jc
for FBGA Package from 27 and 6 °C/W to 16.8 and 3.0
°
C/W respectively
Added lead-free information for 100-pin TQFP, 119 BGA and 165 FBGA
Packages
Updated Ordering Information Table
Changed from Preliminary to Final
*B
351895
See ECN
PCI
Changed I
SB2
from 30 to 40 mA
Updated Ordering Information Table
*C
377095
See ECN
PCI
Modified test condition in note# 14 from V
IH
< V
DD
to
V
IH
<
V
DD
*D
408298
See ECN
RXU
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table
Changed three-state to tri-state
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*E
501793
See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
REV.
ECN NO.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1357C-133AXI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BGC | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BGI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BGXC | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BGXI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1357C-133AXCKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1357C-133AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1357C133AXI | 制造商:CYPRESS 功能描述:New |
| CY7C1357C-133AXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1357C-133AXIT | 功能描述:IC SRAM 9MBIT 133MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。