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參數(shù)資料
| 型號(hào)： | CY7C1357C-133BGXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, BGA-119 |
| 文件頁(yè)數(shù)： | 13/28頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | CY7C1357C-133BGXI |
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CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 13 of 28
TAP Timing
TAP AC Switching Characteristics
Over the Operating Range
[10, 11]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH Time
TCK Clock LOW Time
50
ns
MHz
ns
ns
20
20
20
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
0
TMS Set-Up to TCK Clock Rise
TDI Set-Up to TCK Clock Rise
Capture Set-Up to TCK Rise
5
5
5
ns
ns
ns
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
Notes:
10.t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC Test Conditions. t
R
/t
F
= 1 ns.
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
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相關(guān)PDF資料 |
PDF描述 |
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| CY7C1357C-133BZC | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BZI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BZXC | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1357C-133BZXI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1355C-100BGXI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
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| CY7C1357S-100AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 CY7C1357S-100AXC RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1357S-100AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 CY7C1357S-100AXCT RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1359A-100AC | 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:256K X 18 CACHE TAG SRAM, 4 ns, PQFP100 |
| CY7C1359A-100ACT | 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:Electronic Component |
| CY7C1359A-150AC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 4M-Bit 256K x 16 3.8ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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