參數(shù)資料
型號: CY7C1471V25-133BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件頁數(shù): 12/30頁
文件大小: 373K
代理商: CY7C1471V25-133BZXC
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 12 of 30
Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1473V25)
WE
H
L
L
L
L
BW
b
X
H
H
L
L
BW
a
X
H
L
H
L
Read
Write – No Bytes Written
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1475V25)
WE
H
L
L
L
BW
x
X
H
L
Read
Write – No Bytes Written
Write Byte X
(DQ
x
and
DQP
x)
Write All Bytes
All BW = L
相關(guān)PDF資料
PDF描述
CY7C1473V25-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-133AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1471V33-100AC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 72MBIT 2MX36 8.5NS 100TQFP - Bulk
CY7C1471V33-100AXI 制造商:Cypress Semiconductor 功能描述:
CY7C1471V33-117AXC 功能描述:靜態(tài)隨機存取存儲器 2Mx36 3.3V NoBL FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1471V33-117AXCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 8.5NS 100TQFP - Bulk
CY7C1471V33-133AC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 6.5NS 100TQFP - Bulk