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參數(shù)資料
| 型號(hào)： | CY7C1471V25 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| 中文描述： | 72兆位（2米x 36/4M x 18/1M × 72）流體系結(jié)構(gòu)，通過與總線延遲靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 30/30頁 |
| 文件大?。?/td> | 373K |
| 代理商： | CY7C1471V25 |
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PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 30 of 30
Document History Page
Document Title: CY7C1471V25, CY7C1473V25 and CY7C1475V25, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through
SRAM with NoBL Architecture
Document Number: 38-05287
Orig. of
Change
**
114674
08/06/02
PKS
New Data Sheet
*A
121522
01/27/03
CJM
Updated features for package offering
Updated ordering information
Changed Advanced Information to Preliminary
*B
223721
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Removed 150MHz speed grade offering
Included ISB and IDD values
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
235012
See ECN
RYQ
Minor Change: The data sheets do not match on the spec system and
external web.
*D
243572
See ECN
NJY
Changed ball H2 from V
DD
to NC in the 165-ball FBGA package in page 6
Changed ball R11 in 209-ball BGA package from DQPa to DQPe in page 7
Modified Capacitance values on page 21
*E
299511
See ECN
SYT
Removed 117-MHz Speed Bin
Changed
Θ
JA
from 16.8 to 24.63
°
C/W and
Θ
JC
from 3.3 to 2.28
°
C/W for 100
TQFP Package on Page # 22
Added lead-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
REV.
ECN NO.
Issue Date
Description of Change
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1475V33-133BGXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1473V33 | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1471V25-100AXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1471V25-133BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1473V25-133BZC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1471V25-100AXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1471V25-100BZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1471V25-133AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (2Mx36) 2.5v 133MHz 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1471V25-133AXCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 2.5V 72MBIT 2MX36 6.5NS 100TQFP - Bulk |
| CY7C1471V25-133AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx36 2.5V NoBL FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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