參數(shù)資料
型號: CY7C1471V33-133AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁數(shù): 18/30頁
文件大?。?/td> 373K
代理商: CY7C1471V33-133AXC
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 18 of 30
Boundary Scan Exit Order (x36)
Bit #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
165-Ball ID
C1
D1
E1
D2
E2
F1
G1
F2
G2
J1
K1
L1
J2
M1
N1
K2
L2
M2
R1
R2
R3
P2
R4
P6
R6
N6
P11
R8
P3
P4
P8
P9
P10
R9
R10
R11
N11
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
M11
L11
M10
L10
K11
J11
K10
J10
H11
G11
F11
E11
D10
D11
C11
G10
F10
E10
A10
B10
A9
B9
A8
B8
A7
B7
B6
A6
B5
A5
A4
B4
B3
A3
A2
B2
Boundary Scan Exit Order (x36)
(continued)
Bit #
165-Ball ID
相關(guān)PDF資料
PDF描述
CY7C1471V33-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1475V33-100BGC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1475V33-100BGXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1475V33-133BGC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V33-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1471V33-133AXCT 功能描述:靜態(tài)隨機(jī)存取存儲器 2Mx36 3.3V NoBL FT 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1471V33-133BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1471V33-133BZCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 6.5NS 165FBGA - Bulk
CY7C1471V33-133BZI 制造商:Cypress Semiconductor 功能描述:
CY7C1471XC 制造商:Cypress Semiconductor 功能描述: