- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379076 > CY7C1471V33-133AXC (CYPRESS SEMICONDUCTOR CORP) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture PDF資料下載
參數(shù)資料
| 型號： | CY7C1471V33-133AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| 中文描述： | 2M X 36 ZBT SRAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 |
| 文件頁數(shù)： | 22/30頁 |
| 文件大小： | 373K |
| 代理商： | CY7C1471V33-133AXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁當前第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 22 of 30
Thermal Resistance
[15]
Parameter
Θ
JA
Description
Test Conditions
165 fBGA
Package
16.3
209 BGA
Package
15.2
TQFP
Package
24.63
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.
Θ
JC
2.1
1.7
2.28
°
C/W
Capacitance
[15]
Parameter
Description
Test Conditions
TQFP
Max.
209-BGA
Max.
165-fBGA
Max.
Unit
C
ADDRESS
Address Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 2.5V
V
DDQ
= 2.5V
6
6
6
pF
C
DATA
Data Input Capacitance
5
5
5
pF
C
CTRL
Control Input Capacitance
8
8
8
pF
C
CLK
Clock Input Capacitance
6
6
6
pF
C
I/O
Input/Output Capacitance
5
5
5
pF
AC Test Loads and Waveforms
Note:
15.Tested initially and after any design or process change that may affect these parameters
OUTPUT
R = 1667
R = 1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
2.5V I/O Test Load
OUTPUT
R = 14K
R = 14K
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 0.9V
1.8V
ALL INPUT PULSES
V
DDQ
- 0.2
0.2
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
1.8V I/O Test Load
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1471V33-133BZC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1475V33-100BGC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1475V33-100BGXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1475V33-133BGC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1473V33-133BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1471V33-133AXCT | 功能描述:靜態(tài)隨機存取存儲器 2Mx36 3.3V NoBL FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1471V33-133BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1471V33-133BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 6.5NS 165FBGA - Bulk |
| CY7C1471V33-133BZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1471XC | 制造商:Cypress Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。