參數(shù)資料
型號: CY7C1472V25-250BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
中文描述: 4M X 18 ZBT SRAM, 3 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件頁數(shù): 22/28頁
文件大?。?/td> 378K
代理商: CY7C1472V25-250BZXC
PRELIMINARY
CY7C1470V33
CY7C1472V33
CY7C1474V33
Document #: 38-05289 Rev. *E
Page 22 of 28
Switching Waveforms
Read/Write/Timing
[22, 23, 24]
Notes:
22.For this waveform ZZ is tied LOW.
23.When CE is LOW, CE
is LOW, CE
is HIGH and CE
is LOW. When CE is HIGH, CE
is HIGH or CE
is LOW or CE
is HIGH.
24.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1= Interleaved). Burst operations are optional.
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tCYC
t
CL
t
CH
10
CE
t
CEH
t
CES
WE
CEN
t
CENH
t
CENS
BW
x
ADV/LD
t
AH
t
AS
ADDRESS
A1
A2
A3
A4
A5
A6
A7
t
DH
t
DS
Data
In-Out (DQ)
t
CLZ
D(A1)
D(A2)
D(A5)
Q(A4)
Q(A3)
D(A2+1)
t
DOH
t
CHZ
t
CO
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE
t
OEV
t
OELZ
t
OEHZ
t
DOH
DON’T CARE
UNDEFINED
Q(A6)
Q(A4+1)
相關(guān)PDF資料
PDF描述
CY7C1472V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V25-167BZC 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
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