參數(shù)資料
型號(hào)： CY7C1482V33
廠(chǎng)商： Cypress Semiconductor Corp.
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM(72-Mb (2M x 36/4M x 18/1M x 72) 管道式同步SRAM)
中文描述： 72兆位（2米x 36/4M x 18/1M × 72）流水線(xiàn)同步靜態(tài)存儲(chǔ)器（72 - MB的（2米x 36/4M x 18/1M × 72）管道式同步靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 8/32頁(yè)
文件大?。?/td> 1235K
代理商： CY7C1482V33
CY7C1480V33
CY7C1482V33
CY7C1486V33
Document #: 38-05283 Rev. *H
Page 8 of 32
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t
CO
) is 3.0 ns
(250 MHz device).
The CY7C1480V33/CY7C1482V33/CY7C1486V33 supports
secondary cache in systems using either a linear or inter-
leaved burst sequence. The interleaved burst order supports
Pentium and i486
processors. The linear burst sequence is
suited for processors that use a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
X
) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. ADSP is ignored if CE
1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE
1
, CE
2
, CE
3
are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE
1
is HIGH. The address presented to the address inputs (A) is
stored into the address advancement logic and the Address
Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 3.0 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. After the
SRAM is deselected at clock rise by the chip select and either
ADSP or ADSC signals, its output tri-states immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE
1
, CE
2
, CE
3
are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BW
X
) and
ADV inputs are ignored during this first cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corre-
sponding address location in the memory array. If GW is HIGH,
then the write operation is controlled by BWE and BW
X
signals.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 provides
byte write capability that is described in the
“Truth Table for
Read/Write” on page 11
. Asserting the Byte Write Enable input
(BWE) with the selected Byte Write (BW
X
) input, will selec-
tively write to only the desired bytes. Bytes not selected during
a Byte Write operation will remain unaltered. A synchronous
self-timed Write mechanism has been provided to simplify the
Write operations.
Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a
common I/O device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so will tri-state the output drivers. As a safety
MODE
Input Static
Selects Burst Order
. When tied to GND selects linear burst sequence. When tied to
V
DD
or left floating selects interleaved burst sequence. This is a strap pin and must
remain static during device operation. Mode Pin has an internal pull up.
TDO
JTAG Serial
Output
Synchronous
Serial data-out to the JTAG circuit
. Delivers data on the negative edge of TCK. If
the JTAG feature is not used, this pin must be disconnected. This pin is not available
on TQFP packages.
TDI
JTAG Serial
Input
Synchronous
Serial data-In to the JTAG circuit
. Sampled on the rising edge of TCK. If the JTAG
feature is not used, this pin can be disconnected or connected to V
DD
. This pin is not
available on TQFP packages.
TMS
JTAG Serial
Input
Synchronous
Serial data-In to the JTAG circuit
. Sampled on the rising edge of TCK. If the JTAG
feature is not used, this pin can be disconnected or connected to V
DD
. This pin is not
available on TQFP packages.
TCK
JTAG Clock
Clock input to the JTAG circuitry
. If the JTAG feature is not used, this pin must be
connected to V
SS
. This pin is not available on TQFP packages.
No Connects
. Not internally connected to the die. 144M, 288M, 576M, and 1G are
address expansion pins and are not internally connected to the die.
NC
-
Pin Definitions
(continued)
Pin Name
I/O
Description
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