參數(shù)資料
型號: CY7C1483V33-100BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
中文描述: 4M X 18 CACHE SRAM, 8.5 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件頁數(shù): 1/30頁
文件大?。?/td> 998K
代理商: CY7C1483V33-100BZXC
72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM
CY7C1481V33
CY7C1483V33
CY7C1487V33
Cypress Semiconductor Corporation
Document #: 38-05284 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 01, 2007
Features
Supports 133 MHz bus operations
2M x 36/4M x 18/1M x 72 common IO
3.3V core power supply (V
DD
)
2.5V or 3.3V I/O supply (V
DDQ
)
Fast clock-to-output times
— 6.5 ns (133 MHz version)
Provide high-performance 2-1-1-1 access rate
User selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed write
Asynchronous output enable
CY7C1481V33, CY7C1483V33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1487V33
available in Pb-free and non-Pb-free 209 ball FBGA
package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1481V33/CY7C1483V33/CY7C1487V33 is a 3.3V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133 MHz version). A two-bit on-chip counter captures
the first address in a burst and increments the address
automatically for the rest of the burst access. All synchronous
inputs
are
gated
by
registers
positive-edge-triggered Clock Input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
Chip Enable (CE
1
), depth-expansion Chip Enables (CE
2
and
CE
3
), Burst Control inputs (ADSC, ADSP, and ADV), Write
Enables (BW
x
and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and the
ZZ pin.
controlled
by
a
The CY7C1481V33/CY7C1483V33/CY7C1487V33 allows
either interleaved or linear burst sequences, selected by the
MODE input pin. A HIGH selects an interleaved burst
sequence, while a LOW selects a linear burst sequence. Burst
accesses can be initiated with the Processor Address Strobe
(ADSP) or the cache Controller Address Strobe (ADSC)
inputs. Address advancement is controlled by the Address
Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1481V33/CY7C1483V33/CY7C1487V33 operates
from a +3.3V core power supply while all outputs may operate
with either a +2.5 or +3.3V supply. All inputs and outputs are
JEDEC standard JESD8-5 compatible.
Selection Guide
133 MHz
6.5
335
150
100 MHz
8.5
305
150
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note
1. For best practices recommendations, refer to the Cypress application note
AN1064, SRAM System Guidelines
.
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相關(guān)PDF資料
PDF描述
CY7C1483V33-100BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
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