參數(shù)資料
型號: CY7C1483V33-117BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2M x 36/4M x 18/1M x 72 Flow-through SRAM
中文描述: 4M X 18 STANDARD SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 22/30頁
文件大?。?/td> 638K
代理商: CY7C1483V33-117BGC
PRELIMINARY
CY7C1481V33
CY7C1483V33
CY7C1487V33
Document #: 38-05284 Rev. *A
Page 22 of 30
Switching Waveforms
Write Cycle Timing
[19,20]
Notes:
19. WE is the combination of BWE, BWx, and GW to define a write cycle (see Write Cycle Descriptions table).
20. WDx stands for Write Data to Address X.
ADSP
CLK
ADSC
ADV
ADD
CE
1
OE
GW
WE
CE
2
CE
3
1a
Data In
t
CYC
t
CH
t
CL
t
ADS
t
ADH
t
ADS
t
ADH
t
ADVS
t
ADVH
WD1
WD2
WD3
t
AH
t
AS
t
WS
t
WH
t
WH
t
WS
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
2b
3a
Single Write
Burst Write
Unselected
ADSP ignored with CE
1
inactive
CE
1
masks ADSP
= DON
T CARE
= UNDEFINED
Pipelined Write
2a
2c
2d
t
DH
t
DS
High-Z
High-Z
Unselected with CE
2
ADV Must Be Inactive for ADSP Write
ADSC initiated write
相關(guān)PDF資料
PDF描述
CY7C1483V33-117BZC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133AC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-133BGC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1481V33 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1481V33-100AC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
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