- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379080 > CY7C1483V33-133AXC (CYPRESS SEMICONDUCTOR CORP) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM PDF資料下載
參數(shù)資料
| 型號： | CY7C1483V33-133AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
| 中文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 |
| 文件頁數(shù)： | 19/30頁 |
| 文件大?。?/td> | 998K |
| 代理商： | CY7C1483V33-133AXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
CY7C1481V33
CY7C1483V33
CY7C1487V33
Document #: 38-05284 Rev. *H
Page 19 of 30
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........–0.3V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.3V to +V
DD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
Electrical Characteristics
Over the Operating Range
[13, 14]
DC Input Voltage ...................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current.................................................... >200 mA
Operating Range
Range
Ambient
Temperature
0°C to +70°C 3.3V
–5%/+10%
–40°C to +85°C
V
DD
V
DDQ
Commercial
Industrial
2.5V – 5%
to
V
DD
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min
3.135
3.135
2.375
2.4
2.0
Max
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
For 3.3V I/O
For 2.5V I/O
For 3.3V I/O, I
OH
= –4.0 mA
For 2.5V I/O, I
OH
= –1.0 mA
For 3.3V I/O, I
OL
= 8.0 mA
For 2.5V I/O, I
OL
= 1.0 mA
For 3.3V I/O
For 2.5V I/O
For 3.3V I/O
For 2.5V I/O
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[13]
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[13]
I
X
Input Leakage Current
Except ZZ and MODE
Input Current of MODE Input = V
SS
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
335
305
200
200
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DD,
Output Disabled
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max, I
OUT
= 0 mA,
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I
SB1
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
Max V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX,
inputs switching
Max V
DD
, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
Max V
DD
, Device Deselected,
V
IN
≥
V
DDQ
– 0.3V or V
IN
≤
0.3V,
f = f
MAX
, inputs switching
Max V
DD
, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
I
SB2
All speeds
150
mA
I
SB3
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
200
200
mA
mA
I
SB4
All Speeds
165
mA
Notes
13.Overshoot: V
(AC) < V
+1.5V (pulse width less than t
/2). Undershoot: V
(AC) > –2V (pulse width less than t
CYC
/2).
14.T
Power-up
: assumes a linear ramp from 0V to V
DD
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1483V33-133AXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
| CY7C1483V33-133BZI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
| CY7C1483V33-133BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
| CY7C1483V33-133BZXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
| CY7C1487V33-100BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C148-45DC | 制造商:Cypress Semiconductor 功能描述:Static RAM, 1Kx4, 18 Pin, Ceramic, DIP |
| CY7C148-45PC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1484BV25-250AXI | 制造商:Cypress Semiconductor 功能描述:SYNC - Trays 制造商:Cypress Semiconductor 功能描述:IC SRAM 72MBIT 250MHZ 100TQFP 制造商:Cypress Semiconductor 功能描述:TRAY / Sync SRAMs |
| CY7C1484BV33-250BZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1484BV33-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 3.3v 250MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。