參數(shù)資料
型號: CY7C1483V33-133AXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
文件頁數(shù): 20/30頁
文件大?。?/td> 998K
代理商: CY7C1483V33-133AXI
CY7C1481V33
CY7C1483V33
CY7C1487V33
Document #: 38-05284 Rev. *H
Page 20 of 30
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
100 TQFP
Max
6
5
8
6
5
165 FBGA
Max
6
5
8
6
5
209 FBGA
Max
6
5
8
6
5
Unit
C
ADDRESS
C
DATA
C
CTRL
C
CLK
C
I/O
Address Input Capacitance
Data Input Capacitance
Control Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 3.3V
V
DDQ
= 2.5V
pF
pF
pF
pF
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
100 TQFP
Package
24.63
165 FBGA
Package
16.3
209 FBGA
Package
15.2
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
°
C/W
Θ
JC
2.28
2.1
1.7
°
C/W
AC Test Loads and Waveforms
OUTPUT
R = 317
R = 351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.5V
3.3V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
OUTPUT
R = 1667
R = 1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
3.3V IO Test Load
2.5V IO Test Load
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1483V33-133BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33-133BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1487V33-100BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1487V33-100BGXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
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