參數(shù)資料
型號： CY7C1487V33-150BGC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 2M x 36/4M x 18/1M x 72 Flow-through SRAM
中文描述： 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
封裝： 14 X 22 MM, 2.20 MM HEIGHT, PLASTIC, BGA-209
文件頁數(shù)： 19/30頁
文件大?。?/td> 638K
代理商： CY7C1487V33-150BGC
PRELIMINARY
CY7C1481V33
CY7C1483V33
CY7C1487V33
Document #: 38-05284 Rev. *A
Page 19 of 30
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........
–
0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[12]
...............................
–
0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[12]
............................
–
0.5V to V
DDQ
+ 0.5V
Electrical Characteristics
Over the Operating Range
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
[11]
V
DD
V
DDQ
Com
’
l
0
°
C to +70
°
C
3.3V + 5%/
–
5%
2.375V (min.)
V
DD
(max.)
Parameter
V
DD
V
DDQ
V
OH
Description
Test Conditions
Min.
3.135
2.375
2.4
2.0
Max.
3.465
V
DD
Unit
V
V
V
V
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
V
DD
= Min., I
OH
=
–
4.0 mA
V
DD
= Min., I
OH
=
–
1.0 mA
V
DD
= Min., I
OL
= 8.0 mA
V
DD
= Min., I
OL
= 1.0 mA
3.3V
2.5V
3.3V
2.5V
3.3V
2.5V
3.3V
2.5V
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
2.0
1.7
–
0.3
–
0.3
V
IL
Input LOW Voltage
[12]
0.8
0.7
5
30
30
5
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
I
X
Input Load Current
Input Current of MODE
Input Current of ZZ
Output Leakage Current
V
DD
Operating Supply
GND < V
I
< V
DDQ
Input = V
SS
GND < V
I
< V
DDQ,
Output Disabled
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
I
OZ
I
DD
150 MHz
133 MHz
117 MHz
100 MHz
150 MHz
133 MHz
117 MHz
100 MHz
All speed grades
I
SB1
Automatic CE
Power-down
Current
—
TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = f
MAX
= 1/t
CYC
I
SB2
Automatic CE
Power-down
Current
—
CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
< 0.3V or V
IN
> V
DDQ
–
0.3V,
f = 0
Max. V
DD
, Device Deselected,
or V
IN
< 0.3V or V
IN
> V
DDQ
–
0.3V
f = f
MAX
= 1/t
CYC
I
SB3
Automatic CE
Power-down
Current
—
CMOS Inputs
150 MHz
133 MHz
117 MHz
100 MHz
All speed grades
TBD
TBD
TBD
TBD
TBD
mA
mA
mA
mA
mA
I
SB4
Automatic CE
Power-down
Current
—
TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
, f = 0
Shaded area contains advance information.
Notes:
11.
12. Minimum voltage equals
2.0V for pulse durations of less than 20 ns.
T
is the ambient temperature.
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