參數(shù)資料
型號(hào): CY7C1510V18-250BZI
廠(chǎng)商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述: 8M X 8 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù): 23/27頁(yè)
文件大?。?/td> 458K
代理商: CY7C1510V18-250BZI
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Page 23 of 27
Switching Waveforms
[29, 30, 31]
Read/Write/Deselect Sequence
Notes:
29.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e, A0+1.
30.Output are disabled (High-Z) one clock cycle after a NOP.
31.In this example, if address A2 = A1,then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole
diagram
K
1
2
3
4
5
8
10
6
7
K
RPS
WPS
A
D
READ
READ
WRITE
WRITE
WRITE
NOP
READ
WRITE
NOP
9
A0
tKH
tKHKH
tKL
tCYC
t
tHC
tSAtHA
tSD
tHD
SC
tSAtHA
tSD
tHD
A6
A5
A3
A4
A1
A2
D30
D50
D51
D61
D31
D11
D10
D60
Q
C
C
DON’T CARE
UNDEFINED
t
CQ
CQ
tKHCH
tCO
tKHCH
tCLZ
CHZ
tKH
tKL
Q00
Q01
Q20
tKHKH
tCYC
Q21
Q40
Q41
tCQD
tDOH
tCCQO
tCQOH
tCCQO
tCQOH
tCQDOH
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1510V18-250BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-250BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C15121TC 制造商:Cypress Semiconductor 功能描述:
CY7C15121YC 制造商:Cypress Semiconductor 功能描述:
CY7C15121YC-GBBC 制造商:Cypress Semiconductor 功能描述:
CY7C1512-20VC 制造商:Cypress Semiconductor 功能描述:
CY7C1512-25SC 制造商:Rochester Electronics LLC 功能描述:- Bulk