參數(shù)資料
型號(hào)： CY7C1510V18-250BZI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述： 8M X 8 QDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 26/27頁(yè)
文件大?。?/td> 458K
代理商： CY7C1510V18-250BZI
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 26 of 27
Package Diagram
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
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165-ball FBGA (15 x 17 x 1.40 mm) (51-85195)
51-85195-*A
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相關(guān)PDF資料
PDF描述
CY7C1510V18-250BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-250BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-278BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
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