參數(shù)資料
型號(hào)： CY7C1512V18-167BZXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述： 4M X 18 QDR SRAM, 0.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁(yè)數(shù)： 1/27頁(yè)
文件大小： 458K
代理商： CY7C1512V18-167BZXC
72-Mbit QDR-II SRAM 2-Word Burst
Architecture
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Cypress Semiconductor Corporation
Document #: 38-05489 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 31, 2006
Features
Separate Independent Read and Write Data Ports
— Supports concurrent transactions
250-MHz clock for high bandwidth
2-Word Burst on all accesses
Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 500 MHz) @ 250 MHz
Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
Echo clocks (CQ and CQ) simplify data capture in high
speed systems
Single multiplexed address input bus latches address
inputs for both Read and Write ports
Separate Port Selects for depth expansion
Synchronous internally self-timed writes
Available in x8, x9, x18, and x36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8V (±0.1V); I/O V
DDQ
= 1.4V to V
DD
Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
Offered in lead-free and non-lead free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1510V18 – 8M x 8
CY7C1525V18 – 8M x 9
CY7C1512V18 – 4M x 18
CY7C1514V18 – 2M x 36
Functional Description
The CY7C1510V18, CY7C1525V18, CY7C1512V18, and
CY7C1514V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read
operations and the Write Port has dedicated Data Inputs to
support Write operations. QDR-II architecture has separate
data inputs and data outputs to completely eliminate the need
to “turn-around” the data bus required with common I/O
devices. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of the K clock. Accesses to the QDR-II Read
and Write ports are completely independent of one another. In
order to maximize data throughput, both Read and Write ports
are equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 8-bit words
(CY7C1510V18) or 9-bit words (CY7C1525V18) or 18-bit
words (CY7C1512V18) or 36-bit words (CY7C1514V18) that
burst sequentially into or out of the device. Since data can be
transferred into and out of the device on every rising edge of
both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
250 MHz
250
950
200 MHz
200
850
167 MHz
167
800
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
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相關(guān)PDF資料
PDF描述
CY7C1512V18-167BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-250BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1512V18-167BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512V18-167BZXIES 制造商:Cypress Semiconductor 功能描述:72-MBIT QDR-II SRAM 2-WORD BURST ARCHITECTURE 制造商:Cypress Semiconductor 功能描述:4MX18 72M QDR-II BURST 2 SRAM - Bulk
CY7C1512V18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512V18-200BZCES 制造商:Cypress Semiconductor 功能描述:72-MBIT QDR-II SRAM 2-WORD BURST ARCHITECTURE 制造商:Cypress Semiconductor 功能描述:4MX18 72M QDR-II BURST 2 SRAM - Bulk
CY7C1512V18-200BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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