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參數(shù)資料
| 型號： | CY7C1513V18-200BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| 中文描述： | 4M X 18 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 17/28頁 |
| 文件大?。?/td> | 426K |
| 代理商： | CY7C1513V18-200BZI |
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CY7C1511V18
CY7C1526V18
CY7C1513V18
CY7C1515V18
Document #: 38-05363 Rev. *D
Page 17 of 28
Scan Register Sizes
Register Name
Instruction
Bypass
ID
Boundary Scan
Bit Size
3
1
32
109
Instruction Codes
Instruction
Code
000
001
Description
EXTEST
IDCODE
Captures the Input/Output ring contents.
Loads the ID register with the vendor ID code and places the register between
TDI and TDO. This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register between
TDI and TDO. Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1513V18-200BZXC | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1513V18-200BZXI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1513V18-250BZI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1513V18-250BZXC | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1513V18-250BZXI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1513V18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V QDR II 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1513V18-250BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk |
| CY7C1513V18-300BZC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk |
| CY7C1513YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1514AV18-167BZC | 功能描述:靜態(tài)隨機存取存儲器 2M x 36 1.8V QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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